• 文献标题:   Magnetoresistive and piezoresistive polyaniline nanoarrays in-situ polymerized surrounding magnetic graphene aerogel
  • 文献类型:   Article
  • 作  者:   XIE WH, YAO FC, GU HB, DU A, LEI Q, NAIK N, GUO ZH
  • 作者关键词:   magnetic graphene aerogel, polyaniline nanoarray, magnetoresistance, piezoresistance
  • 出版物名称:   ADVANCED COMPOSITES HYBRID MATERIALS
  • ISSN:   2522-0128 EI 2522-0136
  • 通讯作者地址:  
  • 被引频次:   51
  • DOI:   10.1007/s42114-021-00413-y EA JAN 2022
  • 出版年:   2022

▎ 摘  要

Herein, a novel three-dimensional nanocomposite aerogel (rGO/Fe3O4/PANI NAs) with outstanding magnetoresistance and piezoresistance was manufactured by the in-situ polymerized polyaniline nanoarrays (PANI NAs) surrounding magnetic reduced graphene oxide (rGO/Fe3O4) aerogel that was prepared through the combination of hydrothermal method and lyophilization method. This rGO/Fe3O4/PANI NAs nanocomposite aerogel with 60 wt.% loading of PANI NAs well preserved the porous structure and gained a superior mechanical strength (121.04 kPa) compared with that of rGO aerogel, rGO/Fe3O4 aerogel, and rGO/PANI NAs aerogel (43.54, 58.12, and 116.98 kPa, respectively). The rGO/Fe3O4/PANI NAs nanocomposite aerogel could hold its original state with almost 100% recovery ratio after cycling compression tests under 80% of deformation strain at a suitable compression rate of 5 mm min(-1). The introduction of PANI NAs into the rGO/Fe3O4 aerogel also brought a satisfactory piezoresistive performance with a large gauge factor up to 2.83 and a superb stability for the electrical signal output (which was decreased only 5.80% after 500 compression cycles) to the rGO/Fe3O4/PANI NAs nanocomposite aerogel. The loading of Fe3O4 and PANI NAs also provided rGO/Fe3O4/PANI NAs nanocomposite aerogel with a negative magnetoresistance value up to - 4.37%. The magnetoresistance was explained via the amelioration of spin transport in the material. The unique negative magnetoresistance and excellent piezoresistance make rGO/Fe3O4/PANI NAs nanocomposite aerogel a promising candidate for the development of advanced electronic devices.