• 文献标题:   Instabilities of the AA-Stacked Graphene Bilayer
  • 文献类型:   Article
  • 作  者:   RAKHMANOV AL, ROZHKOV AV, SBOYCHAKOV AO, NORI F
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007
  • 通讯作者地址:   RIKEN
  • 被引频次:   44
  • DOI:   10.1103/PhysRevLett.109.206801
  • 出版年:   2012

▎ 摘  要

Tight-binding calculations predict that the AA-stacked bilayer graphene has one electron and one hole conducting band, and that the Fermi surfaces of these bands coincide. We demonstrate that as a result of this degeneracy, the bilayer becomes unstable with respect to a set of spontaneous symmetry violations. Which of the symmetries is broken depends on the microscopic details of the system. For strong on-site Coulomb interaction we find that antiferromagnetism is the most stable order parameter. For an on-site repulsion energy typical for graphene systems, the antiferromagnetic gap can exist up to room temperature.