▎ 摘　　要

The electrical contact is one of the main issues preventing semiconducting 2D materials to fulfill their potential in electronic and optoelectronic devices. To overcome this problem, a new approach is developed here that uses chemical vapor deposition grown multilayer graphene (MLG) sheets as flexible electrodes for WS2 field-effect transistors. The gate-tunable Fermi level, van der Waals interaction with the WS2, and the high electrical conductivity of MLG significantly improve the overall performance of the devices. The carrier mobility of single-layer WS2 increases about a tenfold (50 cm(2) V-1 s(-1) at room temperature) by replacing conventional Ti/Au metal electrodes (5 cm(2) V-1 s(-1)) with the MLG electrodes. Further, by replacing the conventional SiO2 substrate with a thin (1 mu m) parylene-C flexible film as insulator, flexible WS2 photodetectors that are able to sustain multiple bending stress tests without significant performance degradation are realized. The flexible photodetectors exhibited extraordinarily high gate-tunable photoresponsivities, reaching values of 4500 A W-1, and with very short (<2 ms) response time. The work of the heterostacked structure combining WS2, graphene, and the very thin polymer film will find applications in various flexible electronics, such as wearable high-performance optoelectronics devices.