▎ 摘　　要

First-principles calculations were carried out to study the effect of vacancies and Si-dopant on indium (In) adsorption on graphene. It is demonstrated that a vacancy or a Si-dopant strengthens In adsorption on graphene. The effect of the vacancy is greater at low In coverage than that of Si impurity, owing to the fact that the vacancy provides more dangling bonds for In adsorption, which strengthens the interaction between the In atom and graphene. However, the Si impurity affects In adsorption on graphene stronger than that the vacancy does at high In coverage (i.e. 1/6).