• 文献标题:   Characteristics of CVD Grown Multi-Layer Graphene under Different Types of Precursors and Their Respective Flow Rate
  • 文献类型:   Article
  • 作  者:   BEH KP, YAM FK, TAN CK, ABDALRHEEM R, NG YZ, SUHAIMI FHA, LIM HS, JAFRI MZM
  • 作者关键词:  
  • 出版物名称:   ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY
  • ISSN:   2162-8769
  • 通讯作者地址:   Univ Sains Malaysia
  • 被引频次:   2
  • DOI:   10.1149/2.0221709jss
  • 出版年:   2017

▎ 摘  要

In this work, atmospheric pressure chemical vapor deposition (CVD) method was used to synthesize multi-layer graphene (MLG) on copper substrate. The MLG samples were grown under different type of liquid precursors, i.e. methanol, ethanol, and heptane, with different flow rate of hydrogen (H-2) (combination of both denoted as precursor flow rate). The transferred graphene film onto glass substrate have good coverage area as evident from AFM measurements, however, morphological differences were less notable among precursor types. Post-processing of Raman results revealed an inverse relation of the graphene crystallite size (L-a) and average distance between point defects (LD) toward precursor flow rate and ascending order of hydrocarbon compound. Furthermore, analysis on the G band indicated that graphene synthesized from lower order hydrocarbon compounds possessed better crystalline quality since the peak position was comparable to that of a relaxed state, i.e. at 1580 cm(-1). Transmittance data of the samples were used to deduce the number of graphene layers. Overall, the synthesized graphene consisted of 3 similar to 19 layers. A direct relation between number of graphene layers and precursor flow rate was observed from there. (c) 2017 The Electrochemical Society. All rights reserved.