• 文献标题:   Direct Growth Properties of Graphene Layers on Sapphire Substrate by Alcohol-Chemical Vapor Deposition
  • 文献类型:   Article
  • 作  者:   NAKAMURA A, MIYASAKA Y, TEMMYO J
  • 作者关键词:  
  • 出版物名称:   JAPANESE JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-4922 EI 1347-4065
  • 通讯作者地址:   Shizuoka Univ
  • 被引频次:   5
  • DOI:   10.1143/JJAP.51.04DN03
  • 出版年:   2012

▎ 摘  要

Few nanometers thick graphene layers were directly grown on a-plane (11 (2) over bar0) sapphire substrates by alcohol-chemical vapor deposition (alcohol-CVD) using ethanol as a carbon source and without any catalytic metal on the substrate surface. The growth relationship between the graphene layer and substrate was analyzed using a transmission electron microscope (TEM). The growth rate of graphene layers with different growth temperatures revealed that the Al atom act as a catalyst for synthesizing a graphitic material during the decomposition of ethanol. An optical transmittance and a sheet resistance of the graphene sheet directly grown on sapphire substrate were observed. SiO2/Si and n-6H-SiC substrates were also examined for graphene direct growth to discuss the catalytic behavior of Si atoms compared with Al atoms. (C) 2012 The Japan Society of Applied Physics