• 文献标题:   Graphene nanostrip digital memory device
  • 文献类型:   Article
  • 作  者:   GUNLYCKE D, ARESHKIN DA, LI JW, MINTMIRE JW, WHITE CT
  • 作者关键词:  
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984
  • 通讯作者地址:   Naval Res Lab
  • 被引频次:   105
  • DOI:   10.1021/nl0717917
  • 出版年:   2007

▎ 摘  要

In equilibrium, graphene nanostrips, with hydrogens Sp(2)-bonded to carbons along their zigzag edges, are expected to exhibit a spin-polarized ground state. However, in the presence of a ballistic current, we find that there exists a voltage range over which both spin-polarized and spin-unpolarized nanostrip states are stable. These states can represent a bit in a binary memory device that could be switched through the applied bias and read by measuring the current through the nanostrip.