• 文献标题:   Heteroatom doping of two-dimensional materials: From graphene to chalcogenides
  • 文献类型:   Review
  • 作  者:   ZHU HY, GAN X, MCCREARY A, LV RT, LIN Z, TERRONES M
  • 作者关键词:   2d material, transition metal dichalcogenide, mos2, ws2, graphene, sensing, sensor, electronic, tmd, doping, molybdenum disulfide, tungsten disulfide
  • 出版物名称:   NANO TODAY
  • ISSN:   1748-0132 EI 1878-044X
  • 通讯作者地址:   Penn State Univ
  • 被引频次:   5
  • DOI:   10.1016/j.nantod.2019.100829
  • 出版年:   2020

▎ 摘  要

In recent years, research on two-dimensional (2D) materials including graphene and transition metal dichalcogenides (TMDCs), especially molybdenum and tungsten disulfides (MoS2 and WS2), has rapidly developed. In order to meet the increasing demands of using these 2D materials in fields as diverse as optoelectronics and sensing, heteroatom doping has become an effective method to tune their electronic and physico-chemical properties. This review discusses versatile doping methods applied to graphene and TMDCs, the corresponding changes to their properties, and their potential applications. Future perspectives and new emerging areas are also presented. (C) 2019 Elsevier Ltd. All rights reserved.