▎ 摘　　要

A highly flexible and transparent transistor is developed based on an exfoliated MoS2 channel and CVD-grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (approximate to 74%), and current on/off ratio (>10(4)) with an average field effect mobility of approximate to 4.7 cm(2) V-1 s(-1), all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (approximate to 22 meV) forms at the MoS2/graphene interface, which is comparable to the MoS2/metal interface. The high stability in electronic performance of the devices upon bending up to +/- 2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.