▎ 摘　　要

We propose a new method of layer-by-layer (LbL) doping of thin graphene films. Large area monolayer graphene was synthesized on Cu foil by using the chemical vapor deposition method. Each layer was transferred on a polyethylene terephthalate substrate followed by a salt-solution casting, where the whole process was repeated several times to get LbL-doped thin layers. With this method, sheet resistance was significantly decreased up to similar to 80% with little sacrifice in transmittance. Unlike samples fabricated by topmost layer doping, our sample shows better environmental stability due to the presence of dominant neutral Au atoms on the surface which was confirmed by angle-resolved X-ray photoelectron spectroscopy. The sheet resistance of the LbL-doped four-layer graphene (11 x 11 cm(2)) was 54 Omega/sq at 85% transmittance, which meets the technical target for industrial applications.