▎ 摘　　要

Based on the monolayer growth mode of graphene sheets (2D crystal) by chemical vapor deposition (CVD) on a Cu surface, it should be possible to grow the 2D crystal embedded with single wall carbon nanocones (SWCNC) if nano-conical pits are pre-fabricated on the surface. However, a previous experiment showed that the growing graphene sheet can cross grain boundaries without bending, which seems to invalidate this route for growing SWCNCs. The criterion of Gibbs free energy was applied in the present work to address this issue, showing that the sheet can grow into the valley of a boundary if the boundary has a slope instead of a quarter-turn shape, and SWCNCs can be obtained by this route as long as the lower diameter of the pre-fabricated pit is larger than 1.6 nm and the deposition temperature is higher than 750 K.