• 文献标题:   Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential
  • 文献类型:   Article
  • 作  者:   LAMPIN E, PRIESTER C, KRZEMINSKI C, MAGAUD L
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979
  • 通讯作者地址:   IEMN
  • 被引频次:   17
  • DOI:   10.1063/1.3357297
  • 出版年:   2010

▎ 摘  要

The atomistic structure of the graphene buffer layer on Si-terminated SiC is investigated using a modified version of the environment-dependent interatomic potential. The determination of the equilibrium state by the conjuguate gradients method suffers from a complex multiple-minima energy surface. The initial configuration is therefore modified to set the system in specific valleys of the energy surface. The solution of minimal energy forms a hexagonal pattern composed of stuck regions separated by unbonded rods that release the misfit with the SiC surface. The structure presents the experimental symmetries and a global agreement with an ab initio calculation. It is therefore expected that the interatomic potential could be used in classical molecular dynamics calculations to study the graphene growth. (C) 2010 American Institute of Physics. [doi:10.1063/1.3357297]