▎ 摘　　要

In this letter, complementary resistive switching (CRS) was demonstrated in a single-stack graphene oxide (GO) memory cell for the first time, where the high resistance state can be distinguished into "0" and "1" states by different bias polarities. The high switching uniformity ensures reliable reading/writing operations. By changing the compliance currents in the forming and switching processes, the quantity of oxygen defects required for the conducting-filament (CF) formation and supplied by the GO layer (Q(R) and Q(S)) was adjusted to determine their influence on the CRS. It was found that the CRS only occurred at the condition of Q(R) > Q(S) and its mechanism is due to the inversion of CF geometry.