• 文献标题:   Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane
  • 文献类型:   Article
  • 作  者:   HWANG WS, TAHY K, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, XING HL, SEABAUGH A, JENA D
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
  • ISSN:   2166-2746
  • 通讯作者地址:   Univ Notre Dame
  • 被引频次:   15
  • DOI:   10.1116/1.3693593
  • 出版年:   2012

▎ 摘  要

Top-gated epitaxial graphene nanoribbon (EGNR) field effect transistors (FETs) were fabricated on epitaxial graphene substrates which demonstrated the opening of a substantial bandgap. Hydrogen silsesquioxane (HSQ) was used for the patterning of 10 nm size linewidth as well as a seed layer for atomic layer deposition (ALD) of a high-k dielectric aluminum oxide (Al2O3). It is found that the resolution of the patterning is affected by the development temperature, electron beam dose, and substrate materials. The chosen gate stack of HSQ followed by Al2O3 ALD permits stable device performance and enables the demonstration of the EGNR-FET. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.3693593]