• 文献标题:   Effect of functionalization on the electrostatic charging, tunneling, and Raman spectroscopy of epitaxial graphene
  • 文献类型:   Article
  • 作  者:   HONG JM, NIYOGI S, BEKYAROVA E, ITKIS ME, RAMESH P, BERGER C, DEHEER WA, HADDON RC, KHIZROEV S
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
  • ISSN:   2166-2746
  • 通讯作者地址:   Florida Int Univ
  • 被引频次:   1
  • DOI:   10.1116/1.3693417
  • 出版年:   2012

▎ 摘  要

The authors report the effects of radical functionalization on the electrostatic force microscopy (EFM), the scanning tunneling spectra (STS), and Raman spectroscopy of epitaxial graphene. The EFM studies show the existence of layer-dependent trapped charges in the pristine graphene. The uniform enhancement of energy gap is observed through STS. Raman spectra show nonuniformly distributed D-band intensities throughout the functionalized sample as a result of the inhomogeneous distribution of covalent bonds to the graphene sheets. The functionalization chemistry has a marked effect on the homogeneity of the electrostatic charge and leads to an increase of the energy of the band gap. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.3693417]