• 文献标题:   Tailoring of structural and electron emission properties of CNT walls and graphene layers using high-energy irradiation
  • 文献类型:   Article
  • 作  者:   SHARMA H, AGARWAL DC, SHARMA M, SHUKLA AK, AVASTHI DK, VANKAR VD
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICS DAPPLIED PHYSICS
  • ISSN:   0022-3727
  • 通讯作者地址:   Indian Inst Technol
  • 被引频次:   12
  • DOI:   10.1088/0022-3727/46/31/315301
  • 出版年:   2013

▎ 摘  要

Structural and electron emission properties of carbon nanotubes (CNTs) and multilayer graphene (MLG) are tailored using high-energy irradiation by controlling the wall thickness and number of layers. Ion irradiation by 100MeV Ag+ ions at different fluences is used as an effective tool for optimizing defect formation in CNTs and MLGs, as analysed by micro-Raman spectroscopy. It is found that the cross section for defect formation (eta) is 3.5 x 10(-11) for thin-walled CNTs, 2.8 x 10(-11) for thick-walled CNTs and 3.1 x 10(-11) for MLGs. High-resolution transmission electron microscopy results also show that thin-walled CNTs and MLGs are more defective in comparison with thick-walled CNTs. Carbon atoms rearrange at a fluence of 1 x 10(12) ions cm(-2) in thick-walled CNTs to heal up the damage, which aggravates at higher fluences. The observed electron emission parameters of the modified thin-walled CNTs and MLGs are confirmed with the changes in the structures and are optimized at a fluence of 1 x 10(11) ions cm(-2). However, the electron emission properties of thick-walled CNTs are modified at a fluence of 1 x 10(12) ions cm(-2). The enhancement in the electron emission properties is due to the rearrangement of bonds and hence modified tips due to irradiation.