• 文献标题:   Width-Dependent Band Gap in Armchair Graphene Nanoribbons Reveals Fermi Level Pinning on Au(111)
  • 文献类型:   Article
  • 作  者:   MERINODIEZ N, GARCIALEKUE A, CARBONELLSANROMA E, LI JC, CORSO M, COLAZZO L, SEDONA F, SANCHEZPORTAL D, PASCUAL JI, DE OTEYZA DG
  • 作者关键词:   graphene nanoribbon, onsurface synthesi, fermi level pinning, ullmann coupling, dehydrogenation, scanning, tunneling microscopy spectroscopy, density functional theory
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   DIPC
  • 被引频次:   30
  • DOI:   10.1021/acsnano.7b06765
  • 出版年:   2017

▎ 摘  要

We report the energy level alignment evolution of valence and conduction bands of armchair-oriented graphene nanoribbons (aGNR) as their band gap shrinks with increasing width. We use 4,4 ''-dibromo-para-terphenyl as the molecular precursor on Au(111) to form extended poly-para-phenylene nanowires, which can subsequently be fused sideways to form atomically precise aGNRs of varying widths. We measure the frontier bands by means of scanning tunneling spectroscopy, corroborating that the nanoribbon's band gap is inversely proportional to their width. Interestingly, valence bands are found to show Fermi level pinning as the band gap decreases below a threshold value around 1.7 eV. Such behavior is of critical importance to understand the properties of potential contacts in GNR-based devices. Our measurements further reveal a particularly interesting system for studying Fermi level pinning by modifying an adsorbate's band gap while maintaining an almost unchanged interface chemistry defined by substrate and adsorbate.