• 文献标题:   Stretchable Graphene Transistors with Printed Dielectrics and Gate Electrodes
  • 文献类型:   Article
  • 作  者:   LEE SK, KIM BJ, JANG H, YOON SC, LEE C, HONG BH, ROGERS JA, CHO JH, AHN JH
  • 作者关键词:   graphene transistor, stretchable device, ion gel gate dielectric, printing proces, lowvoltage operation
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Soongsil Univ
  • 被引频次:   263
  • DOI:   10.1021/nl202134z
  • 出版年:   2011

▎ 摘  要

With the emergence of human interface technology, the development of new applications based on stretchable electronics such as conformal biosensors and rollable displays are required. However, the difficulty in developing semiconducting materials with high stretchability required for such applications has restricted the range of applications of stretchable electronics. Here, we present stretchable, printable, and transparent transistors composed of monolithically patterned graphene films. This material offers excellent mechanical, electrical, and optical properties, capable of use as semiconducting channels as well as the source/drain electrodes. Such monolithic graphene transistors show hole and electron mobilities of 1188 +/- 136 and 422 +/- 52 cm(2)/(Vs), respectively, with stable operation at stretching up to 5% even after 1000 or more cycles.