• 文献标题:   Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes
  • 文献类型:   Article
  • 作  者:   KIM BJ, LEE C, JUNG Y, BAIK KH, MASTRO MA, HITE JK, EDDY CR, KIM J
  • 作者关键词:   chemical vapour deposition, electroluminescence, gallium compound, graphene, iiiv semiconductor, light emitting diode, transparency, wide band gap semiconductor
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Korea Univ
  • 被引频次:   73
  • DOI:   10.1063/1.3644496
  • 出版年:   2011

▎ 摘  要

We report on the development of a large-area few-layer graphene (FLG)-based transparent conductive electrode as a current spreading layer for GaN-based ultraviolet (UV) light-emitting diodes (LEDs). Large-area FLG was deposited on Cu using the chemical vapor deposition (CVD) method and subsequently transferred to the surface of the UV LED. UV light at a peak of 372 nm was emitted through the FLG-based transparent conductive electrode. The current spreading effects of FLG were clearly evident in both the optical images of electroluminescence (EL) and current-voltage (I-V) characteristics. Degradation of the FLG-based transparent conductive electrode could be induced by high power operation. Our results indicate that a large-area FLG-based electrode on GaN offers excellent current spreading and ultra-violet transparency properties when compared to the standard optoelectronic indium tin oxide (ITO) contact layer. (C) 2011 American Institute of Physics. [doi:10.1063/1.3644496]