• 文献标题:   Interfacial Bridging Strategy for Charge Extraction/Injection in the BiVO4/CoSn-Layered Double Hydroxide p-n Heterojunction Approach Using Graphene Quantum Dots for Enhanced Water Oxidation Kinetics
  • 文献类型:   Article
  • 作  者:   ALAM S, QURESHI M
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICAL CHEMISTRY LETTERS
  • ISSN:   1948-7185
  • 通讯作者地址:  
  • 被引频次:   3
  • DOI:   10.1021/acs.jpclett.1c02664 EA SEP 2021
  • 出版年:   2021

▎ 摘  要

The design of a photoanode with a bridging strategy that can enhance the charge injection and transport in a heterojunction can be an efficient approach to separate the photogenerated charge carriers and enhance the water oxidation kinetics. Aiming at such issues, herein we propose a BiVO4/GQDs/CoSn-LDH (layered double hydroxide) photoanode, which leads to the formation of a p-n heterojunction with bridged graphene quantum dots (GQDs) to accelerate the photoelectrochemical (PEC) performance. The BiVO4/GQDs/CoSn-LDH photoanode exhibits a maximum photocurrent density of 4.15 mA/cm(2), which is similar to 3-fold higher than for the pristine BiVO4 photoanode with an similar to 250 mV cathodic shift in the onset potential. A faradaic yield of similar to 91% confirms that the obtained photocurrent is mainly due to water oxidation. A mechanistic study based on the electrochemical impedance (EIS), charge separation, and charge injection efficacy measurements reveals that the introduction of GQDs between BiVO4 and CoSn-LDH provides a continuous conducting network to extract holes from the BiVO4 surface and efficiently inject into the CoSn-LDH surface for the water oxidation reaction.