• 文献标题:   Graphene Synthesis on Cubic SiC/Si Wafers. Perspectives for Mass Production of Graphene-Based Electronic Devices
  • 文献类型:   Article
  • 作  者:   ARISTOV VY, URBANIK G, KUMMER K, VYALIKH DV, MOLODTSOVA OV, PREOBRAJENSKI AB, ZAKHAROV AA, HESS C, HANKE T, BUCHNER B, VOBORNIK I, FUJII J, PANACCIONE G, OSSIPYAN YA, KNUPFER M
  • 作者关键词:   graphene layer, synthesi, cubic sic surface
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Leibniz Inst Solid State Mat Res
  • 被引频次:   118
  • DOI:   10.1021/nl904115h
  • 出版年:   2010

▎ 摘  要

The outstanding properties of graphene, a single graphite layer, render it a top candidate for substituting silicon in future electronic devices, The so far exploited synthesis approaches, however, require conditions typically achieved in specialized laboratories and result in graphene sheets whose electronic properties are often altered by interactions with substrate materials. The development of graphene-based technologies requires an economical fabrication method compatible with mass production. Here we demonstrate for the fist Lime the feasibility of graphene synthesis on commercially available cubic SiC/Si substrates of >300 mm in diameter, which result in graphene flakes electronically decoupled from the substrate. After optimization of the preparation procedure, the proposed synthesis method can represent a further big step toward graphene-based electronic technologies.