• 文献标题:   Plasmonically Induced Transparency in Graphene Oxide Quantum Dots with Dressed Phonon States
  • 文献类型:   Article
  • 作  者:   MAHAT M, ROSTOVTSEV Y, KARNA S, LIM GN, D SOUZA F, NEOGI A
  • 作者关键词:   graphene, plasmonic, quantum dot, electromagnetically induced transparency, quantum coherence
  • 出版物名称:   ACS PHOTONICS
  • ISSN:   2330-4022
  • 通讯作者地址:   Univ North Texas
  • 被引频次:   5
  • DOI:   10.1021/acsphotonics.7b01188
  • 出版年:   2018

▎ 摘  要

The absorption in quantum dots (QDs) embedded within a semiconductor matrix can be manipulated by resonant optical excitation of phonons. The far-field interaction of the light leading to dressed phonon states within reduced graphene oxide quantum dots has been coherently modified by a near-field optical driving field at the nanoscale limit. The near-field optical excitation was introduced by resonant excitation of localized plasmons in metal nanoparticles coupled to QDs for ultrafast light manipulation. The coherent interaction of photons due to localized plasmon induced a change in the transient absorption of graphene oxide quantum dots conjugated to silver nanoparticles. Resonant pumping of plasmons and phonons with 400 nm pump photons induces a coherent change in excitonic absorption within QDs which results in phonon-assisted plasmon induced transparency at room temperature. This novel effect can be related to the appearance of the coherent effects such as forming dark states and coherent population trapping related to Fano interference. A large Rabi splitting of 120 meV has been observed within 800 fs of the preparation of the dressed phonon-photon states. A theoretical model has been developed to quantitatively demonstrate that the dark states can be still formed ultrashort time scale corresponding to the dephasing time of the carriers in the QDs.