• 文献标题:   Real-space pseudopotential calculations for graphene dots embedded in hexagonal boron nitride
  • 文献类型:   Article
  • 作  者:   HUANG ZH, CHELIKOWSKY JR
  • 作者关键词:   graphene, hbn, quantum dot, electronic structure
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098
  • 通讯作者地址:   Univ Texas Austin
  • 被引频次:   2
  • DOI:   10.1016/j.ssc.2012.04.068
  • 出版年:   2012

▎ 摘  要

A major challenge for graphene-based applications is the creation of a tunable electronic band gap as would be present for traditional semiconductor alloys. Since hexagonal boron nitride has a very similar lattice structure to graphene, it is a natural candidate for modifying the electronic structure of graphene by forming a hybrid phase sheet containing domains of graphene and hexagonal boron nitride, as has been done experimentally. Here we investigate the properties of such hybrid sheets using pseudopotential-density functional theory implemented in real space. We find for a graphene dot comparable in size to those observed in experiment, the band gap of the sheet is not significantly modified. (C) 2012 Elsevier Ltd. All rights reserved.