• 文献标题:   Scattering of charge carriers in graphene induced by topological defects
  • 文献类型:   Article
  • 作  者:   FONSECA JM, MOURAMELO WA, PEREIRA AR
  • 作者关键词:   graphene, topological defect, scattering, lower dimensional gravity
  • 出版物名称:   PHYSICS LETTERS A
  • ISSN:   0375-9601
  • 通讯作者地址:   Univ Fed Vicosa
  • 被引频次:   10
  • DOI:   10.1016/j.physleta.2010.08.059
  • 出版年:   2010

▎ 摘  要

We study the scattering of graphene quasiparticles by topological defects, represented by holes, pentagons and heptagons. For holes, we found that at low concentration they give a negligible contribution to the resistivity. Whenever pentagons or heptagons are introduced we realize that a fermionic current is scattered by defects. (c) 2010 Elsevier B.V. All rights reserved.