▎ 摘　　要

We report here an excellent field emission performance from periodic patterned graphene nanomesh (GNM) field emitter. A simulation of the relationships between external electric field and the local electric field enhancement on the GNM edges was conducted to optimize the parameters of the nanostructure. Experimental results revealed that the gate driving voltage was as low as 20 V. This kind of emitters also shows good field emission stability. It is expected that the GNM introduced here will generate impacts for the further advancement of graphene field emission devices in emerging technologies and applications.