• 文献标题:   High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping
  • 文献类型:   Article
  • 作  者:   ULSTRUP S, BIANCHI M, HATCH R, GUAN DD, BARALDI A, ALFE D, HORNEKAER L, HOFMANN P
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Aarhus Univ
  • 被引频次:   29
  • DOI:   10.1103/PhysRevB.86.161402
  • 出版年:   2012

▎ 摘  要

The temperature-dependent electronic structure and electron-phonon coupling of weakly doped supported graphene is studied by angle-resolved photoemission spectroscopy and ab initio molecular dynamics simulations. The electron-phonon coupling is found to be extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier density and type in graphene. These changes in the electronic structure are mainly caused by fluctuations in the graphene-substrate distance.