▎ 摘　　要

Graphene nanoribbons have been widely studied for their potential applications in nanoelectronics. Recently, the discovery of producing graphene nanoribbons from chemically longitude-unzipped carbon nanotubes proposed one possible way to obtain graphene nanoribbons on large scale. Graphene oxide nanoribbons, as an intermediate product in this process, have interesting properties and are necessary to be studied. In this paper, we reported on the study of field-effect transistors based on single sheet of graphene oxide nanoribbons obtained from chemically longitude-unzipped carbon nanotubes. We found that the devices with different thicknesses from monolayer to over 20 layers all show semiconducting behaviors and ambipolar field-effect transistor properties. Combining X-ray photoelectron spectroscopy and Raman spectroscopy, the origination of the semiconducting behavior of the graphene oxide nanoribbons was discussed.