• 文献标题:   Localized States Influence Spin Transport in Epitaxial Graphene
  • 文献类型:   Article
  • 作  者:   MAASSEN T, VAN DEN BERG JJ, HUISMAN EH, DIJKSTRA H, FROMM F, SEYLLER T, VAN WEES BJ
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007
  • 通讯作者地址:   Univ Groningen
  • 被引频次:   32
  • DOI:   10.1103/PhysRevLett.110.067209
  • 出版年:   2013

▎ 摘  要

We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements on monolayer epitaxial graphene on SiC(0001) and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface. DOI: 10.1103/PhysRevLett.110.067209