• 文献标题:   Valley-selective Floquet Chern flat bands in twisted multilayer graphene
  • 文献类型:   Article
  • 作  者:   LU M, ZENG J, LIU HW, GAO JH, XIE XC
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:  
  • 被引频次:   7
  • DOI:   10.1103/PhysRevB.103.195146
  • 出版年:   2021

▎ 摘  要

We show that Floquet engineering with circularly polarized light (CPL) can selectively split the valley degeneracy of a twisted multilayer graphene (TMG), and thus generate a controlled valley-polarized Floquet Chern flat band with a tunable large Chern number. It offers a feasible optical way to manipulate the valley degree of freedom in moire flat bands, and hence opens new opportunities to study the valleytronics of moire flat band systems. We thus expect that many of the valley-related properties of TMG, e.g., orbital ferromagnetism, can be switched by CPL with proper doping. We reveal a Chern number hierarchy rule for the Floquet flat bands in a generic (M + N)-layer TMG. We also illustrate that the CPL effects on TMG strongly rely on the stacking chirality, which is a unique feature of TMG. All these phenomena could be tested in the twisted double bilayer graphene systems, which is the simplest example of TMG and has already been realized in experiments.