▎ 摘　　要

High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GC) dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm(2)), breakdown bias (1.5 x 10(6) V/cm), and good mechanical flexibility. Graphene-based TFTs showed a hole and electron mobility of 300 and 250 cm(2)/(V.s), respectively, at a drain bias of -0.1 V. Moreover, graphene TFTs on the plastic substrates exhibited remarkably good mechanical flexibility and optical transmittance. This method explores a significant step for the application of graphene toward flexible and stretchable electronics.