• 文献标题:   High-throughput simulation of the configuration and ionisation potential of nitrogen-doped graphene
  • 文献类型:   Article
  • 作  者:   PER MC, BARNARD AS, SNOOK IK
  • 作者关键词:   graphene, doping, ionisation potential, stability, highthroughput
  • 出版物名称:   MOLECULAR SIMULATION
  • ISSN:   0892-7022 EI 1029-0435
  • 通讯作者地址:   CSIRO Virtual Nanosci Lab
  • 被引频次:   1
  • DOI:   10.1080/08927022.2015.1049173
  • 出版年:   2016

▎ 摘  要

The electron emission properties of doped graphene nanoflakes can determine their suitability for a range of technological applications. Here we investigate the impact of varying the location of a substitutional nitrogen dopant on the first and second ionisation potentials of graphene nanoflakes. We use a high-throughput simulation engine in conjunction with the density functional tight binding method to calculate the properties of both armchair and zig-zag structure nanoflakes containing 1014 carbon atoms. Our results show that dopant location does affect the ionisation potentials, particularly for the armchair structure, and that there is a natural separation into interior and peripheral regions. A simple statistical analysis indicates that the resolution of electronic emissions can be maximised by restricting the nitrogen dopant to the interior region of the armchair nanoflake.