• 文献标题:   Microstructure and growth mechanism of multi-layer graphene standing on polycrystalline SiC microspheres
  • 文献类型:   Article
  • 作  者:   MA J, LI GY, CHU ZY, LI XD, LI YH, HU TJ
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Natl Univ Def Technol
  • 被引频次:   13
  • DOI:   10.1016/j.carbon.2013.12.034
  • 出版年:   2014

▎ 摘  要

Multi-layer graphene standing on polycrystalline SiC microspheres was prepared by pyrolyzing liquid polysilacarbosilane. The lateral dimension of the multi-layer graphene is similar to 100 nm and the average diameter of the microspheres is similar to 0.9 mu m. The growth of the multi-layer graphene is proposed to be initiated by phase separation of the microspheres, and facilitated with both crystallization inside and chemical vapor deposition outside. This method offers an alternative way to prepare multi-layer graphene on SiC without the need for 4H- or 6H-SiC crystals. (C) 2013 Elsevier Ltd. All rights reserved.