▎ 摘　　要

A method is proposed to produce large-area single-layer graphene oxide films on the surface of semiconductor silicon wafers by precipitation from aqueous suspensions. Graphene oxide is synthesized from natural crystalline graphite during chemical oxidation and represents a wide-gap insulator. Single-layer graphene with a homogeneous-fragment size up to 50 mu m can be formed by the reduction of graphene oxide films, and this size is significantly larger than those achieved to date.