▎ 摘　　要

This work aims to develop methodologies to print pinhole-free, vertically stacked heterostructures by sequential deposition of conductive graphene and dielectric h-BN nanosheet networks. We achieve this using a combination of inkjet printing and spray-coating to fabricate dielectric capacitors in a stacked graphene/BN/graphene arrangement. Impedance spectroscopy shows such heterostructures to act as series combinations of a capacitor and a resistor, with the expected dimensional dependence of the capacitance. The areal capacitance ranges from 0.24 to 1.1 nF/cm(2) with an average series resistance of similar to 120 k Omega. The sprayed BN dielectrics are pinhole-free for thicknesses above 1.65 mu m. This development paves the way toward fabrication of all-printed, vertically integrated, multilayer devices. Published by AIP Publishing.