• 文献标题:   Engineering artificial graphene in a two-dimensional electron gas
  • 文献类型:   Article
  • 作  者:   GIBERTINI M, SINGHA A, PELLEGRINI V, POLINI M, VIGNALE G, PINCZUK A, PFEIFFER LN, WEST KW
  • 作者关键词:   electron mobility, fermi level, gallium arsenide, graphene, iiiv semiconductor, twodimensional electron ga
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   CNR
  • 被引频次:   136
  • DOI:   10.1103/PhysRevB.79.241406
  • 出版年:   2009

▎ 摘  要

At low energy, electrons in doped graphene sheets behave like massless Dirac fermions with a Fermi velocity, which does not depend on carrier density. Here we show that modulating a two-dimensional electron gas with a long-wavelength periodic potential with honeycomb symmetry can lead to the creation of isolated massless Dirac points with tunable Fermi velocity. We provide detailed theoretical estimates to realize such artificial graphenelike system and discuss an experimental realization in a modulation-doped GaAs quantum well. Ultrahigh-mobility electrons with linearly dispersing bands might open new venues for the studies of Dirac-fermion physics in semiconductors.