• 文献标题:   Clustering of metal dopants in defect sites of graphene-based materials
  • 文献类型:   Article
  • 作  者:   LAMBIE S, STEENBERGEN KG, GASTON N, PAULUS B
  • 作者关键词:  
  • 出版物名称:   PHYSICAL CHEMISTRY CHEMICAL PHYSICS
  • ISSN:   1463-9076 EI 1463-9084
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.1039/d1cp05008g EA DEC 2021
  • 出版年:   2021

▎ 摘  要

Single-atom catalysts are promising candidates for many industrial reactions. However, making true single-atom catalysts is an experimental dilemma, due to the difficulty of keeping dopant single atoms stable at temperature and under pressure. This difficulty can lead to clustering of the metal dopant atoms in defect sites. However, the electronic and geometric structure of sub-nanoscale clusters in single-atom defects has not yet been explored. Furthermore, recent studies have proven sub-nanoscale clusters of dopants in single-atom defect sites can be equally good or better catalysts than their single-atom counterparts. Here, a comprehensive DFT study is undertaken to determine the geometric and electronic structure effects that influence clustering of noble and p-block dopants in C-3- and N-4-defect sites in graphene-based systems. We find that the defect site is the primary driver in determining clustering dynamics in these systems.