• 文献标题:   Graphene-based charge sensors
  • 文献类型:   Article
  • 作  者:   NEUMANN C, VOLK C, ENGELS S, STAMPFER C
  • 作者关键词:  
  • 出版物名称:   NANOTECHNOLOGY
  • ISSN:   0957-4484 EI 1361-6528
  • 通讯作者地址:   Rhein Westfal TH Aachen
  • 被引频次:   16
  • DOI:   10.1088/0957-4484/24/44/444001
  • 出版年:   2013

▎ 摘  要

We discuss graphene nanoribbon-based charge sensors and focus on their functionality in the presence of external magnetic fields and high frequency pulses applied to a nearby gate electrode. The charge detectors work well with in-plane magnetic fields of up to 7 T and pulse frequencies of up to 20 MHz. By analyzing the step height in the charge detector's current at individual charging events in a nearby quantum dot, we determine the ideal operation conditions with respect to the applied charge detector bias. Average charge sensitivities of 1.3 x 10(-3)e Hz(-1/2) can be achieved. Additionally, we investigate the back action of the charge detector current on the quantum transport through a nearby quantum dot. By varying the charge detector bias from 0 to 4.5 mV, we can increase the Coulomb peak currents measured at the quantum dot by a factor of around 400. Furthermore, we can completely lift the Coulomb blockade in the quantum dot.