▎ 摘　　要

The patterning and transfer of a two-dimensional graphene film without damaging its original structure is an urgent and difficult task. For this purpose, we propose the use of the blister-based laser-induced forward transfer (BB-LIFT), which has proven itself in the transfer of such delicate materials. The ease of implementation of laser techniques reduces the number of intermediate manipulations with a graphene film, increasing its safety. The work demonstrates the promise of BB-LIFT of single-layer graphene from a metal surface to a SiO2/Si substrate. The effect of the parameters of this method on the structure of transferred graphene islands is investigated. The relevance of reducing the distance between irradiating and receiving substrates for the transfer of free-lying graphene is demonstrated. The reasons for the damage to the integrity of the carbon film observed in the experiments are discussed. The preservation of the original crystal structure of transferred graphene is confirmed by Raman spectroscopy.