▎ 摘　　要

The effect of shear distortion on the vacancy induced magnetism in graphene is investigated using extensive first-principles calculations. It is found that shear distortion can lead to magnetic transition between two states with high and low magnetic moments. Such a transition is reversible and results from the breaking of the in-plane symmetry of the local atoms, which reverses spin polarization of the pi bands of the vacancy states near the Fermi level and leads to the change of magnetic transition by 1 mu(B). This finding opens the possibility for nanomechanical control of graphene magnetism and has potential applications in spintronics and magnetic sensing.