▎ 摘　　要

For the first time the influence of out-of-plane deformations, which always exist in graphene, on the non-stationary processes is considered for the case of a monolayer graphene nanoresonator. A new loss mechanism for this device caused by dissipative intra-valley currents stipulated by synthetic electric fields is studied. These fields are generated by time-dependent gauge fields arising in a graphene membrane due to its intrinsic out-of-plane distortions and the influence of the external periodic electromotive force. The corresponding formula for the quality factor has a quantum mechanical origin and includes quantum mechanical parameters. This loss mechanism accounts for an essential part (about 40%) of losses in a graphene nanoresonator and it is specific just for graphene. The ways of minimization of this kind of dissipation (an increase in the quality factor of the electromechanical system) are discussed. It is explained why one can enhance the quality factor by correctly choosing a combination of strains (by strain engineering). In addition, it is shown that the quality factor can be increased by switching on a magnetic field perpendicular to the graphene membrane.