• 文献标题:   Simulation of the Removal of a Lead Film from Graphene by the Irradiation of a Target with a Beam of Xenon Clusters
  • 文献类型:   Article
  • 作  者:   GALASHEV AE, POLUKHIN VA
  • 作者关键词:   graphene, xenon cluster, stres, film, lead
  • 出版物名称:   RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY B
  • ISSN:   1990-7931 EI 1990-7923
  • 通讯作者地址:   Russian Acad Sci
  • 被引频次:   2
  • DOI:   10.1134/S1990793116010164
  • 出版年:   2016

▎ 摘  要

The removal of a lead film from graphene by irradiating a target with a beam of xenon clusters at an incidence angle of 60 degrees was studied by the molecular dynamics method. The complete purification of graphene was achieved at beam energies of 10 and 15 eV. Visual observation and the calculated density profiles and mobility components of the lead atoms indicate the predominantly collective nature of the separation of Pb from graphene in the course of bombardment. When a beam of clusters with an energy of 15 eV acts on the target, the detached film of lead takes a torch shape and has strong internal stresses. The graphene sheet acquires maximum roughness at a beam energy of 10 eV as a result of a large number of the direct hits of xenon clusters on its surface.