▎ 摘　　要

The authors reported on investigation of the thermal conductivity of graphene suspended across trenches in Si/SiO2 wafer. The measurements were performed using a noncontact technique based on micro-Raman spectroscopy. The amount of power dissipated in graphene and corresponding temperature rise were determined from the spectral position and integrated intensity of graphene's G mode. The extremely high thermal conductivity in the range of similar to 3080-5150 W/m K and phonon mean free path of similar to 775 nm near room temperature were extracted for a set of graphene flakes. The obtained results suggest graphene's applications as thermal management material in future nanoelectronic circuits. (C) 2008 American Institute of Physics.