• 文献标题:   Engineering the Electronic Structure of Graphene
  • 文献类型:   Review
  • 作  者:   ZHAN D, YAN JX, LAI LF, NI ZH, LIU L, SHEN ZX
  • 作者关键词:   graphene, electronic structure, doping, stacking, edge
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Nanyang Technol Univ
  • 被引频次:   74
  • DOI:   10.1002/adma.201200011
  • 出版年:   2012

▎ 摘  要

Graphene exhibits many unique electronic properties owing to its linear dispersive electronic band structure around the Dirac point, making it one of the most studied materials in the last 5-6 years. However, for many applications of graphene, further tuning its electronic band structure is necessary and has been extensively studied ever since graphene was first isolated experimentally. Here we review the major progresses made in electronic structure engineering of graphene, namely by electric and magnetic fields, chemical intercalation and adsorption, stacking geometry, edge-chirality, defects, as well as strain.