▎ 摘　　要

This paper introduces a Monte Carlo (MC) approach based on the binary collision approximation to estimate defect types and densities in proton-and heavy-ion-irradiated graphene layers. The types and concentrations of defects that appear in graphene due to irradiation with various ions with energies ranging from similar to 100 keV to similar to 100 MeV are identified. This simple method enables defect introduction rates in graphene to be predicted to within better than a factor of two accuracy, relative to experimental measurements in a beam environment. The results demonstrate that all defects generated by ions with high incident energy are formed via head-on collisions and in-plane recoils, which is unique for 2-D materials.