▎ 摘　　要

We propose a novel photonic application as well as an optical tool to verify the crystallinity of interface-grown graphene demonstrating passive mode-locked lasers. The interface growth process enables the formation of multi-layered graphene at an interface of substrate and catalyst, therefore directly onto the targeted substrate without a transfer process. The synthesized graphene is characterized using Raman spectroscopy and x-ray photoelectron spectroscopy before ultrashort pulse formation to confirm the validity of the process for high-speed photonic applications of graphene. The resultant pulses have a repetition rate, pulse duration, RF extinction ratio of 14.01 MHz, 1.0 ps, and similar to 35 dB, respectively.