• 文献标题:   Research on correlation of mechanical behavior of multilayer in-plane graphene/hexagonal boron nitride heterostructures in the presence of Stone-Wales defects and interlayer sp(3) bonds with multiple physical fields
  • 文献类型:   Article
  • 作  者:   YAO WJ, FAN L, ZHANG ZP
  • 作者关键词:   multilayer staggered stacked heterostructure, stonewales defect, interlayer sp 3 bond, mechanical behavior, spatial configuration angle
  • 出版物名称:   COMPUTATIONAL MATERIALS SCIENCE
  • ISSN:   0927-0256 EI 1879-0801
  • 通讯作者地址:   Shanghai Univ
  • 被引频次:   0
  • DOI:   10.1016/j.commatsci.2020.109974
  • 出版年:   2020

▎ 摘  要

The integration of vertical and in-plane heterostructures will generate unexpected structures that may trigger novel physical properties. By introducing interlayer sp(3) bonds, the multilayer in-plane graphene/h-BN heterostructures are gradually changed to "quasi three-dimensional" structure. Different cases of mechanical properties of quasi three-dimensional structure have been investigated by MD simulations, including the different orientations of SW defect, different sp(3) bonds fraction and distance between sp(3) bond and SW defect. The results show the delamination failure and in-plane failure appear in multilayer staggered stacked heterostructure subjected external force due to complex out-of-plane stresses (interlayer bonds and vdW interaction) and in-plane stresses. The adverse coupling effect of SW defects and sp(3) bond on mechanical properties of quasi three-dimensional structure can be expedited by the interconnection of multiple physical fields (tensile strain and temperature). SW defect has no effect on the Young's modulus of the quasi three-dimensional but can affect greatly the tensile stress and strain. The sp(3) bond will produce a "defect amplification effect" on SW defects, and the "defect amplification effect" decreases with the increase of the distance between them. Our findings suggest a feasible approach to control performance and stability graphene and other two-dimensional materials by introducing defect coupling method and changing spatial configuration angle.