▎ 摘　　要

Resistive memristors are considered to be key components in the hardware implementation of complex neuromorphic networks because of their simplicity, compactness, and manageable power dissipation. However, breakthroughs with respect to both the selector material technology and the bit-cost-effective three-dimensional (3D) device architecture are necessary to provide sufficient device density while maintaining the advantages of a two-terminal device. Despite substantial progress in the scaling of the memristor devices, the scaling potential of the selector materials remains unclear. A majority of the selector materials are unlikely to form conductive filaments, and the effect of the highly concentrated electrical fields on such materials is not well understood. In this study, the atomically thin graphene edge in a 3D vertical memory architecture is utilized to study the effect of highly focused electrical fields on a CuGeS chalcogenide selector layer. We demonstrate that additional interface resistance can improve the nonlinearity and reduce leakage current by almost three orders of magnitude; however, even a relatively low Cu+ ion density can adversely affect leakage because of the highly asymmetric electrode configuration. This study presents a meaningful step toward understanding the characteristics of mobile ions in solid chalcogenide electrolytes and the potential for ultrascaled selector devices.