▎ 摘　　要

We study the electrical and thermoelectric transport properties of the surface state of a topological insulator and graphene in the presence of randomly distributed impurities. For finite impurity strength, the dependence of the transport coefficients as a function of the gate voltage, magnetic field, and impurity potential are obtained numerically. In the limit of zero impurities (clean limit), analytic results for the peak values of the magneto-oscillations in thermopower are derived. Analogous with the conventional two-dimensional electron gas, the peak values are universal in the clean limit. Unlike graphene, in topological insulators the coupling of the electron spin to its momentum leads to a dependence of the transport coefficients on the gyromagnetic ratio (g). We compare our results with data on graphene and identify unique signatures expected in topological insulators due to the magnetoelectric coupling.