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  • 文献标题:   Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition
  • 文献类型:   Article
  • 作　　者:   KEDZIERSKI J, HSU PL, REINA A, KONG J, HEALEY P, WYATT P, KEAST C
  • 作者关键词:   carbon cvd, carbon transistor, chemicalvapor deposition cvd, epitaxial graphene, graphene, graphene transistor
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106
  • 通讯作者地址:   MIT
  • 被引频次:   75
  • DOI:   10.1109/LED.2009.2020615
  • 出版年:   2009

▎ 摘　　要

Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO(2) substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.