• 文献标题:   Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy
  • 文献类型:   Article
  • 作  者:   YE M, CUI YT, NISHIMURA Y, YAMADA Y, QIAO S, KIMURA A, NAKATAKE M, NAMATAME H, TANIGUCHI M
  • 作者关键词:  
  • 出版物名称:   EUROPEAN PHYSICAL JOURNAL B
  • ISSN:   1434-6028 EI 1434-6036
  • 通讯作者地址:   Hiroshima Univ
  • 被引频次:   13
  • DOI:   10.1140/epjb/e2010-00044-3
  • 出版年:   2010

▎ 摘  要

The edge properties of single layer graphene epitaxially grown on partially graphitized 4H-SiC(0001) surface have been investigated with scanning tunneling microscopy (STM). We directly observed the atomic-structure dependency of the super structures in the vicinity of armchair and zigzag edges due to the different kinds of symmetry-breaking at those two edges.